通常，采用SiO2掺杂或A12O3、SiO2和TiO2共同掺杂的方法，使一般化学试剂或工业原料在空气中烧成，便可制得半导化良好的BaTiO3陶瓷异鞍环，且掺杂的范围较宽，重复性也较好。制备BaTiO3半导体陶瓷．在注意原料和配方的同时，还应严格控制配套的工艺。
影响BaTiO3陶瓷半导化的因素主要有加人物和杂质、化学计量偏离率、烧成及冷却条件等。加入物掺杂浓度对BaTiO3陶瓷的电阻率有直接的影响，因此通常控制在一定的浓度范围内。生产蜂窝陶瓷载体中也往往需要把陶瓷材料的居里峰移至需要的温度。
烧成温度、保温时间、烧成时的气氛、冷却时的气氛和冷却速度等都影响BaTiO3陶瓷的电阻率。于施主掺杂的高纯BaTiO3瓷料来说，在缺氧气氛中烧成时，不仅可以实现陶瓷材料的更充分半导化，而巳往往可以有效地拉宽促使陶瓷半导化的施主掺杂的浓度范围。保温时间延长，陶瓷材料的电阻率逐渐升高。（图/文www.cddnvga.cn）
中译英：
Usually, doping with SiO2 or A12O3, SiO2 and TiO2 doping method, so that the general chemical reagents or industrial raw materials sintered in the atmosphere, then preparing semi-conductive good BaTiO3 ceramic super saddle ring, and doped in wide range, repeatability is good. Preparation of BaTiO3 semiconductor ceramics. In attention to raw materials and formula at the same time, we should strictly control matching technology.

Effects of BaTiO3 ceramic semiconducting main factors and characters and impurities, stoichiometric deviation rate, sintering and cooling conditions. Adding material doping concentration of BaTiO3 ceramics resistivity has a direct impact, so usually controlled in a certain range of concentration. The production of ceramic honeycomb carrier is often need to ceramic material to the desired temperature of Mont Curie.